About me

I am Biswajeet Nayak, a Ph.D. researcher at the Materials Science Centre, Indian Institute of Technology Kharagpur. My research explores the design, synthesis, and device integration of two-dimensional (2D) transition metal dichalcogenides (TMDs), with a particular focus on MoSe₂–WSe₂ lateral heterostructures and their potential for next-generation low-power electronic and optoelectronic devices.

My work bridges experimental materials growth and computational device physics. Experimentally, I employ water-assisted chemical vapor deposition (CVD) to achieve wafer-scale, seamless TMD heterostructures with controlled interfaces and doping profiles. On the device side, I investigate lateral PN, NPN, and PNPN junctions for emerging architectures such as tunnel field-effect transistors (TFETs), thyristors, and photodiodes, integrating insights from drift–diffusion, Poisson, and quantum transport simulations.

Beyond fabrication, I leverage first-principles calculations (DFT) and machine-learning-guided process optimization to correlate growth dynamics, band alignment, and device performance. My broader research vision is to advance neuromorphic and quantum hardware based on 2D materials—where seamless heterointerfaces can mimic biological synapses or support correlated quantum transport.

I actively collaborate with groups across India and abroad to merge materials science, device engineering, and data-driven modeling. My work aims to translate fundamental understanding into scalable, CMOS-compatible 2D technologies for the next era of intelligent electronics.