top of page
Bilayer lateral molybdenum disulfide and tungsten disulfide heterostructure grown with the help of one pot method proposed by sahoo et al.
Large area tungsten diselenide grown with the help chemical vapor deposition method. Growth of 1cm area is easily achievable by our method.
Comparison of the rectification ratios for the different lateral devices where red stars denote LHS and blue spheres denote lateral homo-structure
A progress-timeline graph depicting ON-OFF ratio, mobility, and SS values achieved to date via using FETs and TFETs of different heterostructures
bottom of page